Publications: Refereed Journal Papers

  1. Qiliang Li, X. Zhu and D. Ioannou et al., "High-Performance Si Nanowire Field Effect Transistor Fabricated by Self-Aligned Technique" To be submitted to Applied Physics Letter (2008).

  2. Curt A. Richter, Hao D. Xiong, Xiaoxiao Zhu, Wenyong Wang, Vincent M. Stanford, Woong-Ki Hong, Takhee Lee, Dimitris E. Ioannou, and Qiliang Li , "Metrology for the electrical characterization of semiconductor nanowires" IEEE Transaction on Electron Devices, accepted 09/2008.

  3. X. Zhu, Y. Yang, Qiliang Li, D. E. Ioannou, J. S. Suehle and C. A. Richter, "Silicon Nanowire NVM Cell Using High-k Dielectric Charge Storage Layer" Microelectronics Engineering, accepted 09/2008 pdf

  4. C. Choi, W. Cho, S. Koo, S. Kim, Qiliang Li, J. S. Suehle, C. A. Richter, E. M. Vogel, "Three-Dimensional Simulation Study of the Improved On/Off Current Ratio in Silicon Nanowire Field-Effect Transistors" Journal of Korean Physical Society, Vol. 53, No. 3, September 2008 pdf

  5. Qiliang Li , X. Zhu, Y. Yang, D. E. Ioannou, H. D. Xiong, J. S. Suehle and C. A. Richter, "Design, Fabrication and Characterization of High-Performance Silicon Nanowire Transistors" Proceeding of the 8th IEEE Nanotechnology conference, Aug. 2008 pdf

  6. Qiliang Li, "Hybrid Silicon/Molecular Electronics for Memory Application" Modern Physics Letter B vol. 22, pp. 1183 -1202, 2008 (Invited Review Article) pdf

  7. C. A. Richter, H. D. Xiong, X. Zhu, W. Wang, V. M. Stanford, Qiliang Li, D. E. Ioannou, W. Hong and T. Lee "Measurements for The Reliability and Electrical Characterization of Semiconductor Nanowire" Proceeding of 46th Annual IRPS, June 2008 pdf

  8. X. Zhu, Qiliang Li, D. E. Ioannou, W. A. Kimes, J. S. Suehle, J. E. Maslar, H. D. Xiong, S. Yang and C. A. Richter, "Silicon Nanowire Memory Application Using Hafnium Oxide Charge Storage Layer" Proceeding of ISDRS 2007 December 2007 pdf

  9. Qiliang Li, S. Koo, C. Richter and E. Vogel et al., "Precise Alignment of Single Nanowires and Fabrication of Nanoelectromechanical Switch and Other Test Structures" IEEE Trans. Nano. vol. 6, pp. 256-261, 2007.

  10. Qiliang Li, X. Zhu and D. Ioannou et al., "Silicon Nanowire on Oxide Nitride Oxide for Memory Application" Nanotechnology 18, 235204 (4pp), 2007.

  11. Qiliang Li, C. Richter and Suehle et al., "Nanowire Electromechanical Logic Switch" Proceeding of the 7th IEEE International Conference on Nanotechnology, pp.141-145, 2007. pdf

  12. Qiliang Li and Curt A. Richter et al., "Methods to Characterize the electrical and Mechanical properties of Si Nanowire" AIP proceeding for 2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics

  13. Qiliang Li, and S. Koo et al., "Silicon Nanowire Electromechanical Switches for Logic Device Application" Nanotechnology 18, 315202 (5pp) 2007.

  14. H. Xiong, Wenyong Wang, Qiliang Li, Curt A. Richter and John S. Suehle et al., "Random Telegraph Signals and 1/f Noise in ZnO Nanowire Field Effect Transistors" Proceeding of the 7th IEEE International Conference on Nanotechnology, pp.1139-1143, 2007. pdf

  15. H. Xiong, D. Heh, M. Gurfinkel and Qiliang Li et al., "Characterization of Electrically Active Defects in High-K Gate Dielectrics By Using Low Frequency Noise, Charge Pumping, and Fast Id-Vg measurements" Microelectronic Engineering 84, pp.2230 - pp.2234 2007.

  16. H. Xiong, Wenyong Wang, Qiliang Li,  Curt A. Richter and John S. Suehle et al., "Random Telegraph Signals in n-type ZnO Nanowire Field Effect Transistors at Low Temperature" Applied Physics Letter 91, (053107) 2007.

  17. S. Gowda, G. Mathur, Qiliang Li, S. Surthi, and V. Misra, "Hybrid silicon/molecular FETs: A study of the interaction of redox-active molecules with silicon MOSFETs" IEEE Trans. Nano., 5(3), 258-264, 2006

  18. S. Koo, Qiliang Li, M. Edelstein, C. Richter and E. Vogel et al. "Enhanced Channel Modulation in Dual-Gated Silicon Nanowire Transistors" Nano Lett. 5, 2519, 2005

  19. S. Koo, M. Edelstein, Qiliang Li, C. Richter and E. Vogel, "Silicon nanowires as enhancement-mode Schottky-barrier field-effect transistor"Nanotechnology vol. 16, pp. 148 -1485, 2005

  20. S. Gowda, G. Mathur, Qiliang Li, S. Surthi, and V. Misra, "Approach for investigating lateral conduction in self-assembled monolayers" Applied Physics Letters, 87, 26, 2005

  21. Q. Zhao, Y. Luo, S. Surthi, Qiliang Li, G. Mathur, S. Gowda, P. R. Larson, M. B. Johnson, and V. Misra, "Redox-active monolayers on nano-scale silicon electrodes," Nanotechnology, vol. 16, pp. 257-261, 2005.

  22. G. Mathur, S. Gowda, Qiliang Li, S. Surthi, Q. Zhao, and V. Misra, "Properties of functionalized redox-active monolayers on thin silicon dioxide - A study of the. dependence of retention time on oxide thickness," IEEE Transactions on Nanotechnology, vol. 4, pp. 278-283, 2005.

  23. Qiliang Li, G. Mathur, S. Gowda, S. Surthi, Q. Zhao, L. H. Yu, J. S. Lindsey, D. F. Bocian, and Veena Misra, "Multibit memory using self-assembly of mixed ferrocene/porphyrin monolayers on silicon," Advanced Materials, vol. 16, pp. 133, 2004.

  24. Qiliang Li, S. Surthi, G. Mathur, S. Gowda, Q. Zhao, T. A. Sorenson, R. C. Tenent, K. Muthukumaran, J. S. Lindsey, and Veena Misra, "Multiple-bit storage properties of porphyrin monolayers on SiO2," Applied Physics Letters, vol. 85, pp. 1829-1831, 2004.

  25. S. Gowda, G. Mathur, Qiliang Li, S. Surthi, Q. Zhao, J. S. Lindsey, D. F. Bocian, and V. Misra, "Modulation of drain current by redox-active molecules incorporated in Si MOSFETs" 2004 International Electron Devices Meeting, Dec. 13-15, Technical Digest, (IEEE Cat. No.04CH37602), pp. 707-710, 2004

  26. Z. M. Liu, A. A. Yasseri, R. S. Loewe, A. B. Lysenko, V. L. Malinovskii, Q. Zhao, S. Surthi, Qiliang Li, V. Misra, J. S. Lindsey, and D. F. Bocian, "Synthesis of porphyrins bearing hydrocarbon tethers and facile covalent attachment to Si(100)," Journal of Organic Chemistry, vol. 69, pp. 5568-5577, 2004.

  27. R. S. Loewe, A. Ambroise, K. Muthukumaran, K. Padmaja, A. B. Lysenko, G. Mathur, Qiliang Li, D. F. Bocian, V. Misra, and J. S. Lindsey, "Porphyrins bearing mono or tripodal benzylphosphonic acid tethers for attachment to oxide surfaces," Journal of Organic Chemistry, vol. 69, pp. 1453-1460, 2004.

  28. K. Muthukumaran, R. S. Loewe, A. Ambroise, S. I. Tamaru, Qiliang Li, G. Mathur, D. F. Bocian, V. Misra, and J. S. Lindsey, "Porphyrins bearing arylphosphonic acid tethers for attachment to oxide surfaces," Journal of Organic Chemistry, vol. 69, pp. 1444-1452, 2004.

  29. Qiliang Li, S. Surthi, G. Mathur, S. Gowda, Veena Misra, T. A. Sorenson, R. C. Tenent, W. G. Kuhr, S. Tamaru, J. S. Lindsey, Z. M. Liu, and D. F. Bocian, "Electrical characterization of redox-active molecular monolayers on SiO2 for memory applications," Applied Physics Letters, vol. 83, pp. 198-200, 2003.

  30. S. Gowda, G. Mathur, Qiliang Li, S. Surthi, Q. Zhao, J. S. Lindsey, K. Mobley, D. F. Bocian, and V. Misra, "Hybrid silicon/molecular memories: co-engineering for novel functionality" 2003 International Electron Devices Meeting, Dec. 8-10,Technical Digest, IEEE International, pp 22.1.1 - 22.1.4, 2003

  31. Qiliang Li, G. Mathur, M. Homsi, S. Surthi, Veena Misra, V. Malinovskii, K. H. Schweikart, L. H. Yu, J. S. Lindsey, Z. M. Liu, R. B. Dabke, A. Yasseri, D. F. Bocian, and W. G. Kuhr, "Capacitance and conductance characterization of ferrocene-containing self-assembled monolayers on silicon surfaces for memory applications," Applied Physics Letters, vol. 81, pp. 1494-1496, 2002.

  32. Qiliang Li, J. Yin, C. Xiao, and Z. Liu, "Enhanced ferroelectric properties of Pb(Ta0.05Zr0.48Ti0.47)O3 thin films on Pt/TiO2/SiO2/Si substrates using La0.67Sr0.33MnO3 buffer layers" J. Phys. D: Appl. Phys., vol. 33, pp. 107-110, 2000.

  33. J. Yin, Qiliang Li, Z. Liu, M. Wang, Z Wu, and T. Yu "Influence of cationic stoichiometry of the bottom electrode La1-xSrxCoO3 on the microstructures of Pb(Ta0.05Zr0.48Ti0.47)O3 ferroelectric films using Pt/TiO2 conducting barrier" Appl. Phys. A, vol. 70, pp. 69-73, 2000.

  34. L. Wang, J. Li, X. Huang, Qiliang Li, X. Yin, W. Fan, J. Xu, W. Li, Z. Li, J. Zhu, M. Wang, Z. Liu and K. Chen, "Surface morphology and structural observation of laser interference crystallized a-Si : H/a-SiNx : H multilayers"APPLIED SURFACE SCIENCE, vol. 165 (2-3), pp. 85-90, 2000.

  35. J. Wu, Q. Cao, K. Gu, Qiliang Li, L. Wang, H. Zhang, Y. Du, and S. Zhang, "The colossal magnetoresistance of (La1-yTby)2/3Sr1/3MnO3 perovskite" ACTA PHYSICA SINICA 48 (2): 370-377 FEB 1999.

  36. L. Wang, T. Ma, X. Huang, J. Xu, Qiliang Li, Z. Wu, and K. Chen "Properties of hydrogenated amorphous silicon carbide films irradiated by excimer pulse laser" ACTA PHYSICA SINICA-OVERSEAS EDITION 7 (12): 930-935 DEC 1998.

  37. B. Chen,  Qiliang Li and F. Gao, "Ultra-violet detector with shallow junction and grid structured electrode" Journal of Wuhan University, Jan. 20, 1997

Conferences Presentations/Papers

  1. Qiliang Li, X. Zhu, Y. Yang, D. E. Ioannou, H. D. Xiong, J. S. Suehle and C. A. Richter ""Design, Fabrication and Characterization of High-Performance Silicon Nanowire Transistors" The 8th IEEE Nanotechnology conference, Arlington, TX, Aug. 2008

  2. Qiliang Li and Curt A. Richter et al., "Nanowire Electromechanical Logic Switch" Annual IEEE Nano Conference, 2007, Hong Kong.

  3. Qiliang Li and C. A. Richter, "arge-area Grid-Structure Nanowire Biosensor for Cell Concentration" Submitted to Annual Trend in Nanotechnology (TNT) conference 2007.

  4. Qiliang Li, S. Koo and D. Ioannou et al., "Methods to Characterize the Electrical Properties of Silicon Nanowires" 2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, Gaithersburg, MD, 2007

  5. Qiliang Li, X. Zhu and D. Ioannou et al., "Nanowire Non-volatile Memory with Silicon Nitride Charge Trapping Layer" APS March Meeting, Denver, CO, 2007

  6. Qiliang Li, S. Koo and C. Richter et al., "Silicon Nanowire Electromechanical Switch for Logic Device Application" MRS Spring in San Francisco, April 2007.

  7. H. Xiong and Qiliang Li et al., "Characterization of Electrically Active Defects in High-K Gate Dielectrics By Using Low Frequency Noise, Charge Pumping, and Fast I-V Measurements" INFOS biannual conference on Insulating Films on Semiconductor, 2007

  8. Chang-Yong Choi, Sang-Mo Koo and Qiliang Li et al., "Three-dimensional simulation and experimental study on enhanced on/off current ratio in silicon nanowire field effect transistors" IVC-17/ICN+T 2007, Stockholm, Sweden.

  9. Qiliang Li, S. Koo, C. Richter and E. Vogel et al., "Precise manipulation and Alignment of Single Nanowires and Fabrication of Nanoelectromechanical Switch and Other Test Structures" IEEE Silicon Nanoelectronics Conference, 2006, Honolulu, Hi, USA

  10. S. Koo, C. Richter, Qiliang Li and E. Vogel et al., "Schottky-contact silicon nanowire field effect transistor test structures" IEEE Silicon Nanoelectronics Workshop 2006, Honolulu, Hi

  11. S. Koo, Qiliang Li, M. Edelstein, C. Richter and E.Vogel "Silicon nanowire field effect transistor test structures fabricated by top-down approaches" (Invited Talk), International Semiconductor Device Research Symposium, Washington DC, USA, Dec. 2005.

  12. S. Koo and Qiliang Li et al. "Si Nanowire Field-effect Transistors with Schottky Barrier Source/Drain Contacts by Top-down Approach" International Conference on Characterization and Metrology for ULSI Technology, Univ. Texas-Dallas, Richardson, Texas, March 15-18, 2005

  13. S. Koo and Qiliang Li et al. "Transport properties of silicon nanowire field effect transistor test structures fabricated by top-down approaches" 2005 Si Nanoelectronics Workshop, June 12-13, Japan.

  14. S. Gowda and Qiliang Li et al. "M odulation of Drain Current by Redox-Active Molecules Incorporated in Si MOSFET"  IEDM, San Francisco, CA (2004)

  15. Qiliang Li et al. "Capacitance and conductance characterization of self-assembled monolayers on silicon and silicon dioxide surfaces for memory applications" TNT conference in Spain, 2003.

  16. Qiliang Li, S. Surthi, and V. Misra et al. "C haracterization of self-assembled monolayers on silicon for memory applications" MRS, Boston, Fall 2002

  17. G. Mathur, Qiliang Li and V. Misra et al. "Hybrid CMOS/Molecular Memories Using Redox-Active Self-Assembled Monolayers" IEEE Nanotechnology conference (2003)

  18. S. Gowda and Qiliang Li et al. "H ybrid Silicon/Molecular Memories: Co-Engineering for Novel Functionality" IEDM, Washington, D.C. (2003)

  19. S. Surthi, Qiliang Li and V. Misra et al. "Fabrication and characterization of redox-active monolayers on silicon dioxide for memory applications" MRS, Spring  2003

  20. Q. Zhao, Qiliang Li, S. Gowda, G. Mathur, and V. Misra, "Polysilicon based nanoscale vertical structures with redox-active monolayers" 2003 MRS Fall meeting, Boston, MA.

  21. L. Wang and Qiliang Li et al. "AFM and HREM observation of the pulse laser interference crystallized a-Si:H/a-SiNx:H Multilayer" MRS, Spring 2000.

Patent

  1. "High temperature attachment of organic molecules to substrates" by Qiliang Li et. al.,  US patent  7223628.