BOOK CHAPTER

       M. V. Rao, “Ion-implantation in SiC”, Book Title: “Silicon Carbide: Materials, Devices and Applications”, Editors: Z. C. Feng and J. H. Zhao, This book is a volume of the book series: ‘Optoelectronic Properties of semiconductors and Superlattices’- Editor-in-chief: M. O. Monasreh, Publisher: Taylor and Francis Engineering .

PUBLICATIONS IN REFEREED JOURNALS

1.         S.G. Sundaresan, A.V. Davydov, Y-L. Tian, I. Levin, M. Vaudin, J. Maslar, J. Schlager, N. Sanford, and M.V. Rao, "Silicon carbide nanowires grown by a novel microwave-assisted physical vapor transport process", (to be submitted to Journal of Materials Chemistry).

2.         S.G. Sundaresan, Y-L. Tian, J.A. Schreifels, M.C. Ridgway, and  M.V. Rao, "Ultra-high temperature annealing of ion-implanted SiC", Journal of Applied Physics, (in review)

3.                  T. Okayama, J.A. Roussos, S. C. Binari, and M. V. Rao, “Power added efficiency and linearity tradeoffs of GaN and GaAs microwave power HEMT devices”, Solid-State Electronics (int. Review at NRL).

4.                  J. J. Shah, S. G. Sundaresan, D. R. Reyes, J. Geist, J. C. Booth, M. V. Rao, and M. Gaitan, “ Continuous-wave microwave dielectric heating of fluids in an integrated microfluidic device”, Applied Physics Letters (in review).

5.        S.G. Sundaresan, Y-L. Tian, M.C. Ridgway, N.A. Mahadik, S.B. Qadri, and M.V. Rao, "Solid-state microwave annealing of ion-implanted 4H-SiC", accepted for publication in Nuclear Instruments and Methods in Physics Research B (March 2007 issue).

6.                 S.G. Sundaresan, M. V. Rao, Y-L. Tian, J. A. Schreifels, M. C. Wood, A.V. Davydov, and K.A. Jones, “Comparison of solid-state microwave annealing with conventional furnace annealing of ion-implnted SiC”, Journal of Electronic Materials, accepted for publication in March 2007 special issue of III-nitrides, ZnO and SiC.

7.                  N.A. Mahadik, S.B. Qadri, M.V. Rao and J.P. Yesinowski, “Depth resolved X-ray determination of surface strain in HVPE-grown GaN”, Applied Physics A, 86(1):67-71 (2007).

8.                  N.A. Mahadik, M. V. Rao and A. V. Davydov, “Low resistive and thermally stable copper based ohmic contacts to n-type GaN”, Journal of Electronic Materials, 35(11):2035-2040 (2006).

9.                  J. J. Shah, J. Geist, L. E. Locascio, M. Gaitan, M. V. Rao, and W. N. Vreeland, “Surface modification of PMMA for the application of wall coating polymers for microchip electrophoresis”, Journal of Electrophoresis, 27(19):3788-3796 (2006).

10.                  J. J. Shah, J. Geist, L. E. Locascio, M. Gaitan, M. V. Rao, and W. N. Vreeland, “Capillarity induced solvent-actuated bonding of polymeric microfluidic devices”, Analytical Chemistry, Vol. 78, pp. 3348-3353 (2006).

11.                  J. W. Simonson, S. B. Qadri, M. V. Rao, R. Fischer, J. Grun and M.C. Ridgway, “Athermal annealing of Mg-implanted GaAs”, Applied Physics, Vol. A 81, pp. 601-605 (2005).

12.                  S. Mitra, M. V. Rao, and K. A. Jones, “Transconductance frequency dispersion measurements on MESFETs made by ion-implantation in SI 4H-SiC”, Solid-State Electronics, Vol. 48, pp. 143-147 (2004).

13.              S. Mitra, M. V. Rao, N. Papanicolaou, K. A. Jones, M. Derenge, O. W. Holland, R. D. Vispute, and S. R. Wilson, “ DLTS study on doubly implanted n+-p and p+-n 4H-SiC diodes”, Journal of Applied Physics, Vol. 95, pp. 69-75 (2004).

14.              M. V. Rao, J. Brookshire, S. Mitra, S. B. Qadri, R. Fischer, J. Grun, N. Papanicolaou, M. Yousuf, and M. C. Ridgway, “Athermal annealing of Si-implanted GaAs and InP”, Journal of Applied Physics, Vol. 94, pp. 130-135 (2003).

15.              S. B. Qadri, M. Yousuf, C. A. Kendziora, B. Nachumi, J. Grun, M. V. Rao, J. Tucker, S. Siddiqui, and M. Ridgway, “Structural modifications of silicon-implanted GaAs induced by the athermal annealing technique”, Applied Physics A, Vol. 79, pp. 1971-1977 (2004).

16.              M. V. Rao, “Maturing ion-implantation technology and its device applications in SiC”, Solid-State Electronics, Solid-State Electronics, Vol. 47, pp. 213-222 (2003).

17.              S. Mitra, M. V. Rao, K. A. Jones, N. Papanicolaou, and S. Wilson, “Deep levels in ion-implanted SiC field-effect-transistors”, Solid-State Electronics, Vol. 47, pp. 193-198 (2003).

20.              J.B. Tucker, N. Papanicolaou, M.V. Rao, and O.W. Holland, “Fully Ion-implanted MESFETs in Bulk semi-insulating 4H-SiC”, Diamond and Related Materials, Vol. 11, pp. 1344-1348 (2002).

21.              J. B. Tucker, S. Mitra, N. Papanicolaou, A. Siripuram, M. V. Rao, and O. W. Holland, “Nitrogen and phosphorus implanted MESFETs in semi-insulating 4H-SiC”, Diamond and Related Materials, Vol. 11, pp. 392-395 (2002).

22.              J. B. Tucker, M. V. Rao, N. A. Papanicolaou, J. Mittereder, A. Ellasser, A. W. Clock, M. Ghezzo, O. W. Holland, and K. A. Jones, “Characteristics of planar n-p junction diodes made by double-implantations into 4H-SiC”, IEEE Transactions on Electron Devices, Vol. 48, pp. 2665-2670 (2001).

23.              N.A. Papanicolaou, M.V. Rao, J. Mittereder, and W.T. Anderson, “Reliable Ti/Al and Ti/Al/Ni/Au contacts to n-type GaN formed by vacuum annealing”, Journal of Vacuum Science and Technology B, Vol. 19, pp. 261-267 (2001).

24.              J.B. Tucker, M. V. Rao, O.W. Holland, P.H. Chi, G. Braga, J. A. Freitas, Jr., and N. Papanicolaou, “Material and n-p junction characteristics of As- and Sb-implanted SiC”, Diamond and Related Materials, Vol. 9, pp. 1887-1896 (2000).

25.              E.M. Handy, M.V. Rao, O.W. Holland, P.H. Chi, K.A. Jones, M.A. Derenge, R.D. Vispute, and T. Venkatesan, “Al, B, and Ga ion-implantation doping of SiC”, Journal of Electronic Materials, Vol. 29, pp. 1340-1345 (2000).

26.              E.M. Handy, M.V. Rao, O.W. Holland, K.A. Jones, M.A. Derenge, and N. Papanicolaou, “Variable-dose (1017 to 1020 cm-3) phosphorus ion-implantation into 4H-SiC”, Journal of Applied Physics, Vol. 88, pp. 5630-5634 (2000).

27.              M.V. Rao, A.K. Berry, T.Q. Do, M.C. Ridgway, P.H. Chi, and J. Waterman, “S and Si ion-implantation in GaSb grown on GaAs”, Journal of Applied Physics, Vol. 86, pp. 6068-6071 (1999).

28.              E.M. Handy, M. V. Rao, O. W. Holland, K. A. Jones, and P. H. Chi, “Acceptor ion-implantation in SiC”, Nuclear Instruments and Methods in Physics Research B, Vol. 166-167, pp. 395-398 (2000).

29.              N.A. Papanicolaou, A. Edwards, M. V. Rao, A. E. Wickendon, D. D. Koleske, R. L. Henry,and W. T. Anderson, “Cr/Al and Cr/Al/Ni/Au ohmic contacts to n-type GaN”, Journal of Applied Physics, Vol. 87, pp. 380-386 (2000).

30.              M. V. Rao, J. B. Tucker, M. C. Ridgway, O. W. Holland, M. A. Capano, N. Papanicolaou, and J. Mittereder, “Ion-implantation in bulk semi-insulating 4H-SiC”, Journal of Applied Physics, Vol. 86, pp. 752-758 (1999).

26.              E. M. Handy, M. V. Rao, K. A. Jones, M. Derenge, P. H. Chi, R. D. Vispute, T. Venkatesan, N. A. Papanicolaou, and J. Mittereder, “Effectiveness of AlN encapsulant in annealing ion-implanted SiC”, Journal of Applied Physics, Vol. 86, pp. 746-751(1999).

27.              M. V. Rao, J. Tucker, O. W. Holland, N. Papanicolaou, P. H. Chi, J. W. Kretchmer, and M.Ghezzo, “Donor ion-implantation doping into SiC”, Journal of Electronic Materials, Vol. 28, pp. 334-340 (1999).

28.              N. A. Papanicolaou, M. V. Rao, B. Molnar, J. Tucker, A. Edwards, O. W. Holland, and M. C. Ridgway, “Ion-implantation in SiC and GaN”, Nuclear Instruments and Methods in Physics Research B, Vol. 148, pp. 416-420 (1999).

29.              N. A. Papanicolaou, A. Edwards, M. V. Rao, and W. T. Anderson, “Si/Pt ohmic contacts to p-type 4H-SiC”, Applied Physics Letters, Vol. 73, pp. 2009-2011 (1998).

30.              J. Gardner, A. Edwards, M. V. Rao, O. W. Holland, N. A. Papanicolaou, G. Kelner, M. Ghezzo, J. Kretchmer, and M. Capano, “Material and n-p junction characteristics of N, P, and N/P implanted 6H-SiC”, Journal of Applied Physics, Vol. 83, pp. 5118-5124 (1998).

31.              D. Dwight, M. V. Rao, O. W. Holland, G. Kelner, P. H. Chi, J. Kretchmer, and M. Ghezzo, “Nitrogen and aluminum implantation in high resistivity silicon carbide”, Journal of Applied Physics, Vol. 82, pp. 5327-5333 (1997).

32.              A. Edwards, D. Dwight, M. V. Rao, M. Ridgway, N. Papanicolaou, and G. Kelner, “Compensation implants in SiC”, Journal of Applied Physics,  Vol. 82, pp. 4223-4227 (1997).

33.              M. V. Rao, J. A. Gardner, P. H. Chi, O. W. Holland, G. Kelner, J. Kretchmer, and M. Ghezzo, “Phosphorus and boron implantation in 6H-SiC”, Journal of Applied Physics, Vol. 81, pp. 6635-6641 (1997).

34.              M. V. Rao, D. Nordstrom, J. A. Gardner, A. Edwards, E. G. Roth, G. Kelner, and M. Ridgway, “Ion-implantation in 6H-SiC”, Nuclear Instruments and Methods in Physics Research B, Vol. 127/128, pp. 655-659 (1997).

35.              A. Edwards, M. V. Rao, B. Molnar, A. E. Wickenden, O. W. Holland, and P. H.         Chi, "Ion implantation doping of OMCVD grown GaN", Journal of Electronic Materials, Vol. 26, pp. 334-339 (1997).

36.              J. A. Gardner, M. V. Rao, Y. L. Tian, O. W. Holland, E. G. Roth, P. H. Chi, and I. Ahmad, “Rapid thermal annealing of ion-implanted 6H-SiC by microwave processing”, Journal of Electronic Materials, Vol. 26, pp. 144-150 (1997).

37.              M. V. Rao, W. Stacey, and H. B. Dietrich, "Characteristics of fully implanted GaAs vertical PIN diodes", Solid State Electronics, Vol. 41, pp. 47-50 (1997).

38.              M. V. Rao, N. Papanicolaou, and C. Caneau, "Effect of transition metal implantation on the characteristics of In0.52Al0.48As/In0.53Ga0.47As MSM photodetectors", Optical Engineering, Vol. 35, pp. 3400-3403 (1996).

39.              J. Gardner, M. V. Rao, O. W. Holland, G. Kelner, D. S. Simons, P. H. Chi, J. M. Andrews, J. Kretchmer, and M. Ghezzo, "Elevated temperature nitrogen implants in 6H-SiC", Journal of Electronic Materials, Vol. 25, pp. 885-892 (1996).

40.              A. K. Berry, P. E. Thompson, M. V. Rao, M. Fatemi, and H. B. Dietrich, "Boron ion implantations into GexSi1-x", Applied Physics Letters, Vol. 68, pp. 391-393 (1996).

41.              M. V. Rao, P. Griffiths, J. Gardner, O. W. Holland, M. Ghezzo, J. Kretchmer, G. Kelner, and J. A. Freitas, Jr., "Al, Al/C, and Al/Si implantations in 6H-SiC," Journal of Electronic Materials, Vol. 25, pp. 75-80 (1996).

42.              M. V. Rao, J. Gardner, P. Griffiths, O. W. Holland, G. Kelner, P. H. Chi, and D. S. Simons, "p-n junction formation in 6H-SiC by acceptor implantation into n-type substrate", Nuclear Instruments and Methods in Physics Research, Vol. B106, pp. 333-338 (1995).

43.              M. V. Rao, P. Griffiths, G. Kelner, J. A. Freitas, Jr., O. W. Holland, D. S. Simons, P. H. Chi, and M. Ghezzo, "Al and B-ion implantations into 6H- and 3C-SiC", Journal of Applied Physics, Vol. 77, pp. 2479 - 2485 (1995).

44.              M. V. Rao, H. B. Dietrich, P. B. Klein, A. Fathimulla, D. S. Simons, and P. H. Chi, "Ion implantation into (X11)A-oriented InP and GaAs for x?4," Journal of Applied Physics, Vol. 75, pp. 7774 - 7778 (1994).

45.              J. M. Martin, R. K. Nadella, M. V. Rao, D. S. Simons, P. H. Chi, and C. Caneau, "Fe and Ti implants in In0.52Al0.48As," Journal of Electronic Materials, Vol. 9, pp. 1153 - 1158 (1993).

46.              J. M. Martin, R. K. Nadella, J. Vellanki, M. V. Rao, and O. W. Holland, "Thermally stable buried high resistance layers in p-type InP obtained by MeV energy Ti implantation," Journal of Applied Physics, Vol. 73, pp. 7238 - 7243 (1993).

47.              M. V. Rao, "High (MeV) energy ion implantation and its device applications in GaAs and InP," IEEE Transactions on Electron Devices, Vol. 40, pp. 1053 - 1066 (1993).

48.              J. Vellanki, R. K. Nadella, M. V. Rao, H. B. Dietrich, D. S. Simons, and P. H. Chi, "MeV energy S implantation in GaAs and InP,"  Journal of Electronic Materials,            Vol. 22, pp. 559 - 566 (1993).

49.              M. V. Rao, "Ion implantation in III-V compounds," Nuclear Instruments and Methods in Physics Research, Vol. B79, pp. 645 - 647 (1993).

50.              J. Vellanki, R. K. Nadella, M. V. Rao, O. W. Holland, D. S. Simons, and P. H. Chi, "MeV energy Fe and Co implants to obtain buried high resistance layers and to compensate donor implant tails in InP," Journal of Applied Physics, Vol. 73, pp. 1126 - 1132 (1993).

51.              J. Vellanki, R. K. Nadella, and M. V. Rao, "Highly conductive buried n+ layers in InP:Fe created by MeV energy Si, S, and Si/S implantation for application to microwave devices," Journal of Electronic Materials, Vol. 22, pp. 73 - 80 (1993).

52.              R. K. Nadella, J. Vellanki, M. V. Rao, and H. B. Dietrich, "DC characteristics of high breakdown voltage PIN diodes made by 20 MeV Si implantation in InP:Fe," IEEE Electron Device Letters, Vol. 13, pp. 473 - 475 (1992).

53.              M. V. Rao, S. M. Gulwadi, S. Mulpuri,  D. S. Simons, P. H. Chi,  W-P. Hong,C. Caneau, O. W. Holland, and H. B. Dietrich, "Co, Fe, and Ti implants in InGaAs and Co implants in InP at 200 oC," Journal of Electronic Materials, Vol. 21, pp. 923 - 928 (1992).

54.              R. K. Nadella, J. Vellanki, M. V. Rao, and O. W. Holland, "MeV B compensation implants into GaAs and InP," Journal of Applied Physics,  Vol. 72, pp. 2179 – 2184 (1992).

55.              M. V. Rao, S. M. Gulwadi, W-P. Hong, G-K. Chang, and N. Papanicolaou, "Metal-semiconductor-metal photodetector using Fe-implanted InGaAs," Electronics Letters, Vol. 28, pp. 46 - 47 (1992).

56.              M. V. Rao, R. K. Nadella, and O. W. Holland, "Elevated temperature 3 MeV Si and 150 keV Ge implantations in InP:Fe," Journal of Applied Physics, Vol. 71, pp. 126 - 132 (1992).

57.              M. V. Rao, "Rapid isothermal annealing of high and low energy ion-implanted InP and In0.53Ga0.47As," IEEE Transactions on Electron Devices, Vol. 39, pp. 160 - 165 (1992).

58.              M. V. Rao, W. Kruppa, H. B. Dietrich, S. C. Binari, and B. J. Boos, "GaAs vertical PIN diode using MeV implantation," Electronics Letters, Vol. 27, pp. 2265 - 2267 (1991).

59.              R. K. Nadella, M. V. Rao, D. S. Simons, P. H. Chi, and H. B. Dietrich, "10 - 20 MeV energy range Si implantations into InP:Fe," Journal of Applied Physics, Vol. 70, pp. 7188 - 7190 (1991).

60.              M. V. Rao, W-P. Hong, C. Caneau, G-K. Chang, N. Papanicolaou, and H. B. Dietrich, "In0.53Ga0.47As metal - semiconductor - metal photodetector using proton bombarded p-type material," Journal of Applied Physics, Vol. 70, pp. 3943 - 3945 (1991).

61.              R. K. Nadella, M. V. Rao, D. S. Simons, and P. H. Chi, "0.4 - 3.0 MeV range Be ion implantations into InP:Fe," Journal of Applied Physics, Vol. 70, pp. 2973 - 2978 (1991).

62.              S. M. Gulwadi, R. K. Nadella, O. W. Holland, and M. V. Rao, "Rutherford backscattering studies on high-energy Si implanted InP," Journal of Electronic Materials, Vol. 20, pp. 615 - 619 (1991).

63.              R. K. Nadella, M. V. Rao, D. S. Simons, P. H. Chi, M. Fatemi, and H. B. Dietrich, "High-energy Si implantations into InP:Fe," Journal of Applied Physics, Vol. 70, pp. 1750 - 1757 (1991).

64.              M. V. Rao, W-P. Hong, G-K. Chang, N. Papanicolaou, and H. B. Dietrich, "Light-ion bombarded p-type In0.53Ga0.47As photoconductive detectors," Journal of Applied Physics, Vol. 69, pp. 7881 - 7886 (1991).

65.              M. V. Rao,  P. E. Thompson, R. Echard, S. Mulpuri, A. K. Berry, and H. B. Dietrich, "Ion-implantation in InSb grown on GaAs," Journal of Applied Physics, Vol. 69, pp. 4228 - 4233 (1991).

66.              S. M. Gulwadi, M. V. Rao, A. K. Berry, D. S. Simons, P. H. Chi, and H.B. Dietrich, "Transition metal implants in In0.53Ga0.47As," Journal of Applied Physics, Vol. 69, pp. 4222 - 4227 (1991).

67.              S. M. Gulwadi, M. V. Rao, D. S. Simons, O. W. Holland, W-P. Hong, C. Caneau, and H. B. Dietrich, "Range statistics and Rutherford backscattering studies on Fe-implanted In0.53Ga0.47As," Journal of Applied Physics, Vol. 69, pp. 162 - 167 (1991).

68.              M. V. Rao, R. S. Babu, A. K. Berry, H. B. Dietrich, N. Bottka, "Si-implantation into GaAs grown on Si," Journal of Electronic Materials, Vol. 19, pp. 789 - 794 (1990).

69.              M. V. Rao, G-K. Chang, W-P. Hong, "High-sensitivity and high-speed InGaAs photoconductive detector," Electronics Letters, Vol. 20, pp. 756 - 757 (1990).

70.              M. V. Rao, F. Moore, and H. B. Dietrich, "Dual implantations in InGaAs," Journal of Applied Physics, Vol. 68, pp. 3763 - 3765 (1990).

71.              M. V. Rao, P. E. Thompson, H. B. Dietrich, and D. S. Simons, "MeV Be implantation in GaAs," Journal of Applied Physics, Vol. 67, pp. 6165 - 6170 (1990).

72.              M. V. Rao and R. K. Nadella, "Be+/P+, Be+/Ar+, and Be+/N+ co-implantations into InP:Fe," Journal of Applied Physics, Vol. 67, pp. 1761 - 1766 (1990).

73.              M. V. Rao, S. M. Gulwadi, P. E. Thompson, A. Fathimulla, and L. Aina, "Halogen lamp rapid thermal annealing on Si- and Be- implanted In0.53Ga0.47As," Journal of Electronic Materials, Vol. 18, pp. 131 - 136 (1989).

74.              M. V. Rao, N. R. Keshavarz-Nia, D. S. Simons, P. M. Amirthraj, P. E. Thompson, T. Y. Chang, and J. M. Kuo, "Fe-implantation in In0.53Ga0.47As/InP," Journal of Applied Physics, Vol. 65, pp. 481 - 485 (1989).

75.              M. V. Rao, M. P. Keating, and P. E. Thompson, "Si- and Be- implantations in InP:Fe activated by halogen lamp rapid thermal annealing," Journal of Electronic    Materials, Vol. 17, pp. 315 - 320 (1988).

76.              M. V. Rao, R. S. Babu, H. B. Dietrich, and P. E. Thompson, "Light-ion bombarded p-type In0.53Ga0.47As," Journal of Applied Physics, Vol. 64, pp. 4755 - 4759 (1988).

77.              M. V. Rao, L. Aina, A. Fathimulla, and P. E. Thompson, "Deep radiative levels in as-grown and implanted rapid thermal annealed InP," Journal of Applied Physics, Vol. 64, pp. 2426 - 2433 (1988).

78.              M. V. Rao, "Photoluminescence in Si-implanted and lamp-annealed InP:Fe," Journal of Applied Physics, Vol. 61, pp. 337 - 341 (1987).

79.              M. V. Rao and P. E. Thompson, "Two-step rapid thermal annealing of Si-implanted InP:Fe," Applied Physics Letters, Vol. 50, pp. 1444 - 1446 (1987).

80.              M. V. Rao, P. K. Bhattacharya, and C. Y. Chen, "Low-noise In0.53Ga0.47As:Fe photoconductive detector for optical communication," IEEE Transactions on Electron Devices, Vol. ED - 33, pp. 67 - 71 (1986).

81.              M. V. Rao and W. Kruppa, "Si-implantation in semi-insulating In0.53Ga0.47As:Fe,'' Electronics Letters, Vol. 22, pp. 299 - 301 (1986).

82.              M. V. Rao, "Electrical and optical nonuniformity of Si-implanted and rapid thermal annealed InP:Fe," Applied Physics Letters, Vol. 48, pp. 1522 - 1524 (1986).

83.              M. V. Rao, "LPE growth and characterization of low carrier concentration n- and p- In0.53Ga0.47As," Journal of Applied Physics, Vol. 58, pp. 4316 - 4319 (1985).

84.              M. V. Rao and P. K. Bhattacharya, "Fe and Cr doping of liquid phase epitaxial In0.53Ga0.47As/InP," Journal of Applied Physics, Vol. 57, pp. 333 - 337 (1985).

85.              M. V. Rao and P. K. Bhattacharya, "High-gain In0.53Ga0.47As:Fe photoconductive detectors," Electronics Letters, Vol. 20, pp. 812 - 813 (1984).

86.              P. K. Bhattacharya, W. H. Goodman, and M. V. Rao, "Photoluminescence in Si-implanted InP," Journal of Applied Physics, Vol. 55, pp. 509 - 514 (1984).

87.              M. V. Rao and P. K. Bhattacharya, "Postgrowth heat treatment effects in high-purity liquid-phase-epitaxial In0.53Ga0.47As, "Electronics Letters, Vol. 19, pp. 196 - 197       (1983).

88.              P. K. Bhattacharya, M. V. Rao, and M. J. Tsai, "Growth and photoluminescence spectra of high-purity liquid - phase - epitaxial In0.53Ga0.47As," Journal of Applied Physics, Vol. 54, pp. 5096 - 5102 (1983).

89.              P. M. Prasad, M. V. Rao, and V. P. Sunder Singh, "Spin-on sources for boron and arsenic diffusion," International Journal of Electronics, Vol. 47, pp. 508 - 512 (1979).

I.d. CONFERENCE PROCEEDINGS ARTICLES AND PRESENTATIONS (1990 - present)

1.                  S. G. sundaresan, Y-L. Tian, A. V. Davydov, and M. V. Rao, “Rapid microwave annealing of nitrogen implanted silicon carbide”, MS&T, Cincinnati, OH.

2.                  S. G. Sundaresan, B. J. Polk, D. R. Reyes, M. V. Rao, and M. Gaitan, “Temperature control of microfluidic systems by microwave heating”, Micro-Total Analysis Systems (MTAS)-2005 Conference Proceedings, Boston, MA, September 2005.

3.                  S. Mitra, M. V. Rao, N. Papanicolaou, and K. A. Jones, “Traps in ion-implanted SiC Devices”,  12th Intl. Workshop on the Physics of Semiconductor Devices, Chennai, India, Dec. 2003.

4.                  S. Mitra, M. V. Rao, N. Papanicolaou, and K. Jones, “Characteristics of MESFETs made by ion-implantation in bulk semi-insulating 4H-SiC”, Presented at ICSCRM’ 2001, Japan, Nov. 2001, Paper appeared in proceedings.

5.                  M. V. Rao, “Maturing ion-implantation technology in SiC and its device applications”, Invited Paper, Proceedings of 2001 International Semiconductor Device Research Symposium, Dec. 2001, Washington, D.C., pp. 519-522.

6.                  S. Mitra, M. V. Rao, K. A. Jones, N. Papanicolaou, and S. Wilson, “Deep levels in ion-implanted SiC field-effect-transistors”, Proceedings of 2001 International Semiconductor Device Research Symposium, Dec. 2001, Washington, D.C., pp.21-24.

7.                  X. W. Wang, W. J. Zhu, X. Guo, T. P. Ma, J. Tucker and M. V. Rao, “High Temperature (450 C) Reliable NMISFETs on P-type SiC”, IEEE 1999 International Electron Device Meeting (IEDM) Technical Digest, pp. 209-212, December 1999.

8.                  W. J. Zhu, X. W. Wang, T. P. Ma J. B. Tucker and M. V. Rao, “Highly durable SiC nMISFETs at 450 C”, Materials Science Forum, Vols. 338-342, pp. 1311-1314 (2000).

9.                  J. B. Tucker, E. M. Handy, M. V. Rao, O. W. Holland, N. A. Papanicolaou, and K. A. Jones, “Characteristics of n-p junction diodes made by double implantations into SiC”, Materials Science Forum, Vols. 338-342, pp. 925-928 (2000).

10.              N. A. Papanicolaou, A. Edwards and M. V. Rao, “Al based Ohmic contacts on n-type GaN”, invited paper, Presented at Workshop on Compound Semiconductor Materials and Devices ’99, New Orleans, LA, March 1999.

11.              M. V. Rao, J. Tucker, E. M. Handy and N. A. Papanicolaou, “Recent Ion-implantation results in SiC”, invited paper, Presented at Workshop on Compound semiconductor Materials and Devices ’99, New Orleans, LA, March 1999.

12.              P. H. Chi, E. M. Handy, and M. V. Rao, “Effect of AlN encapsulant  in high-temperature annealing on ion-implanted SiC as characterized by SIMS”, Proceedings of SIMS’99.

13.              N. A. Papanicolaou, A. Edwards, M. V. Rao, A. E. Wickenden, D. D. Koleske, R. L. Henry, and W. T. Anderson, “A high temperature vacuum annealing method for forming ohmic contacts to GaN and SiC”, Proceedings of Fourth International High Temperature Electronics Conference, Albuquerque, June 1998, pp. 122 - 127.

14.              P. H. Chi and M. V. Rao, “Secondary ion mass spectrometry characterization of As- and Sb- implanted SiC”, Presented at the 11th Annual SIMS Workshop, Austin, TX, May 1998.

15.              M. V. Rao, A. Edwards, A. S. Samphonh, and N. Papanicolaou, “Ion-implantation doping and Ohmic contacts on SiC”, invited paper, Workshop on Compound Semiconductor Materials and Devices, Monterey, CA, February 1998.

16.              J. Gardner, A. Edwards, M. V. Rao, N. Papanicolaou, G. Kelnar, and O. W. Holland, “Doping of SiC using ion implantation,” Proceedings of 1997 International Semiconductor Device Research Symposium, Charlottesville, December 1997, pp. 311 - 314.

17.              M. V. Rao, J. Gardner, A. Edwards, N. Papanicolaou, G. Kelner, O. W. Holland, M. Ghezzo, and J. Kretchmer, “Ion-implantation doping in SiC and its device applications”, Presented at International Conference on Silicon Carbide, III-Nitrides, and Related Materials, Stockholm, Sweden, September 1997, Paper published in Materials Science Forum, Vol. 264-268, pp. 717-720.

18.              N. A. Papanicolaou, A. Edwards, M. V. Rao, J. A. Mittereder, and W. T. Anderson, “Ti/Al and Cr/Al ohmic contacts to n-type GaN formed by furnace annealing”, presented at International Conference on Silicon Carbide, III-Nitrides, and Related Materials, Stockholm, Sweden, September 1997, Paper published in Materials Science Forum, Vol. 264-268, pp. 1407-1410.
19.              M.V. Rao, “Ion implantation doping of SiC and GaN”, invited paper, Workshop on Compound Semiconductor Materials and Devices, San Antonio, TX, February 1997.

20.              J. Gardner, M. V. Rao, Y. L. Tian, O. W. Holland, G. Kelner, J. A. Freitas, Jr., and I. Ahmad, "Microwave annealing of ion-implanted 6H-SiC", Proceedings of Spring MRS Meeting, San Francisco, CA, April 1996.

21.              B. Molnar, A. E. Wickenden, and M. V. Rao, "Si-implantation and annealing of GaN for n-type layer formation", Proceedings of Spring MRS Meeting, San Francisco, CA, April 1996.

22.              J. A. Gardner, M. V. Rao, and Y. L. Tian, "Annealing of ion-implanted 6H-SiC by microwave processing", 38th Electronic Materials Conference, Santa Barbara, CA, June 1996.

23.              B. Molnar, A. Edwards, M. V. Rao, A. Wickenden, M. Schurman, Z. C. Feng, and R. A. Stall, "Si, Mg, P, and Mg/P implantation and annealing of semi-insulating and n-type MOCVD GaN", 38th Electronic Materials Conference, Santa Barbara, June 1996.

24.              M. V. Rao, J. Gardner, O. W. Holland, G. Kelner, M. Ghezzo, D. S. Simons, and P. H. Chi, "Al and N ion implantations in 6H-SiC", Institute of Physics Conference Series No. 142, pp. 521-524 (1995).

25.              J. A. Freitas, Jr., J. Gardner, and M. V. Rao, "Activation of donor and acceptor implants in 6H-SiC: a photoluminescence study", Institute of Physics Conference Series No. 142, pp. 529-532 (1995).

26.              P. H. Chi, D. S. Simons, M. V. Rao, and P. Griffiths, "Secondary ion mass spectrometry characterization of B and Al implanted a- and ß-SiC", 42nd ASMS Conference on Mass Spectrometry, Chicago, Il, May 29-June 3, 1995, p. 848.

27.              J. Gardner, P. Griffiths, M. V. Rao, and G. Kelner, "Al and N ion implantations into 6H-SiC," Electronic Materials Conference, Charlottesville, Virginia, 1995.

28.              M. V. Rao and O. W. Holland, "Acceptor implantations into SiC,", invited paper, TMS Meeting, Las Vegas, Nevada, 1995.

29.              M. V. Rao, J. Gardner, P. Griffiths, O. W. Holland, G. Kelner, P. H. Chi, and D. S. Simons, "p-n junction formation in 6H-SiC by acceptor implantation into n-type substrate, "Ion Beam Modification of Materials, Canberra, Australia, 1995.

30.              M. V. Rao, J. A. Freitas, Jr., H. B. Dietrich, A. K. Berry, J. Vellanki, and N. Dhar, "Photoluminescence and Raman scattering characterization of as-grown and implanted bulk ZnSe crystals," SPIE Proceedings Series, Vol. 2228, 1994.

31.              M. V. Rao, "High-energy ion implantation and its device applications in III-V compounds," invited paper, Proceedings of 1993 International Semiconductor Device Research Symposium, Charlottesville, Virginia, pp. 419-422, 1993.

32.              R. K. Nadella, J. Vellanki, and M. V. Rao, "MeV energy ion implantation and its device applications in InP," Proceedings of the Fifth International Conference on Indium Phosphide and Related Materials, Paris, France, 1993.

33.              J. M. Martin, M. V. Rao, J. B. Boos, and O. W. Holland, "Fe and Ti compensation implants in n- and p-InAlAs and p-InP, "Proceedings of the Fifth International Conference on Indium Phosphide and Related Materials, Paris, France, 1993.

34.              M. V. Rao, W-P. Hong, and N. Papanicolaou, "Transition metal implantation in In based compounds and its applications to optoelectronic devices," UVA/ONR workshop on optoelectronics, Charlottesville, Virginia, 1992.

35.              M. V. Rao, "Ion-implantation in III-V compounds," invited paper, 12th International Accelerator Conference, Denton, Texas, 1992, (presentation).

36.              J. Vellanki, R. K. Nadella, and M. V. Rao, "MeV energy range Si and Si/S implantations at 200 oC for the fabrication of InP microwave devices," 34th Electronic Materials Conference, Cambridge, Massachusetts, 1992, (presentation).

37.              R. K. Nadella, J. Vellanki, and M. V. Rao, "Vertical InP PIN diode made by MeV energy Si implantation," Proceedings of the Fourth International Conference on Indium Phosphide and Related Materials, Newport, Rhode Island, pp. 377 - 380, 1992.

38.              R. K. Nadella, J. Vellanki, and M. V. Rao, "High energy elevated temperature Si and room temperature B implants in InP", Proceedings of the MRS Fall meeting, Boston, MA, Vol. 240, pp. 829 - 834, 1991.

39.              M. V. Rao, "Rapid thermal annealing of ion-implanted InP, InGaAs, and InSb", invited paper, SPIE Proceedings Series, Vol. 1595, pp. 108 - 119, 1992.

40.              M. V. Rao, R. K. Nadella, and S. M. Gulwadi, "Implantation of high-energy Si and Be ions in InP and low-energy transition metal ions in InGaAs," Proceedings of the Third International Conference on Indium Phosphide and Related Materials, Cardiff, UK, pp. 260 - 263, 1991.

41.              R. K. Nadella, S. M. Gulwadi, and M. V. Rao, "High-energy Be implants in nP:Fe," proceedings of SOTAPOCS XIV in Spring meeting of Electrochemical Society, Washington, DC, May 1991.

42.              R. K. Nadella, M. V. Rao, D. S. Simons, and H. B. Dietrich, "MeV energy range Si implantation into InP:Fe," proceedings of SOTAPOCS XIII in Fall meeting of Electrochemical Society, Seattle, WA, October 1990.

43.              S. M. Gulwadi, M. V. Rao, D. S. Simons, O. W. Holland, and H. B. Dietrich, "Fe-implantation in In0.53Ga0.47As," Proceedings of SOTAPOCS XII in Spring meeting of Electrochemical Society, Montreal, Canada, Vol. 90 - 15, pp. 99 - 104, 1990.

44.              M. V. Rao, R. Echard, P. E. Thompson, A. K. Berry, S. Mulpuri, and F. G. Moore, "Ion Implantation in InSb grown on GaAs," Proceedings of MRS Fall Meeting, Boston, MA, Vol. 216, pp. 259 - 264, 1990.