Ph.D. Theses Completed:
1.
Name of the student: Sadanand M. Gulwadi
Title of the Thesis: Transition metal Implants in
In0.53Ga0.47As.
Completion
date: September 1992.
2.
Name of the student: Ravi K. Nadella
Title of the Thesis: High energy implants in InP.
Completion
date: June 1993.
3.
Name of the student: Jayadev Vellanki
Title of the Thesis: High energy ion implantation for
microwave device applications.
Completion
date: December 1995.
4.
Name of the Student: Andrew Edwards
Title of the Thesis: Processing Development and
Characterization of GaN Field Effect Transistors.
Completion
Date: June 1998.
5.
Name of the Student: Jason Gardner
Title of the Thesis: Ion implantation doping of
SiC.
Completion
Date: June 1998.
6.
Name of the student: Jesse Tucker
Title of the Thesis: Fabrication and characterization of
fully implanted n-p junction diode and Metal-Semiconductor
Field-Effect-Transistor (MESFET).
Completion Date: May 2001.
7.
Name of the student: Souvick Mitra
of SiC devices.
Completion Date: December 2003.
M.S. Theses
Completed:
1.
"An electrical characterization of Si and Be implanted
InP:Fe activated by halogen lamp rapid thermal annealing," by Micheal P.
Keating, 1988.
2.
"Fe-implantation in
In0.53Ga0.47As," by Navid
R. Keshavarz-Nia, 1988.
3.
"Implantations in GaAs grown on Si," by R. S. Babu,
1989.
4.
"Be/P, Be/Ar, and Be/N co-implantations into InP," by Ravi
K. Nadella, 1989.
5.
"Ion implantations in InSb grown on GaAs," by Richard E.
Echard, 1990.
6.
"Elevated temperature N implantation into 6H-SiC", by Jason
Gardner, 1995.
7.
“Nitrogen and aluminum implantation in vanadium doped high
resistivity 6H-silicon carbide”, by D. N. Dwight, 1997.
8.
“As and Sb implantations in SiC”, by Jesse Tucker,
1998.
9.
“Pumped optical fiber amplifier”, by Wallace Johnson,
1998.
10.
“AlN encapsulant for annealing ion-implanted SiC”, by Evan
Handy, 2000.
11.
“Ion-implantation doping of GaSb”, by Thang Do,
1999.
12.
“Microwave dielectric heating of micro-fluids”, by Siddarth
Sundaresan, 2004.
13.
“Growth
and characterization of high-quality CdHgTe on Si by MBE”, by Carissa
Khanna, 2006.