GEORGE MASON UNIVERSITY
ELECTRICAL AND COMPUTER ENGINEERING DEPARTMENT
Spring 2008 ECE 684: MOS Device Electronics
PDF file of the syllabus of ECE864
Time and location: Monday 7:20 pm – 10:00 pm, S&T-II, Room 260
Instructor: Qiliang Li, S&T-II, Room 249, Tel 703-993-1596, Fax 703-993-1601 qli6@gmu.edu
Office Hours: Monday 3:00 – 5:00 pm; other times by appointment.
Course DESCRIPTION
The main purpose of this course is to provide the fundamental knowledge of Metal-Oxide-Semiconductor (MOS) devices, with emphasis on the principles of operation of the MOS Field Effect Transistor (FET). The MOSFET is the fundamental device of most electronic (digital and analog) circuitry. The course will also briefly cover silicon technology used to fabricate MOSFETs and the silicon chips in general. The course will also cover the basic theory of heterojunction, the heterojunction bipolar junction transistor (HBJT) and the high electron mobility transistor (HEMT). For these topics lecture notes will supplement the class textbook.
Required Textbook: “Device Electronics for Integrated Circuits” by Muller and Kamins (3rd Ed. Wiley 2003, ISBN 978-0-471-59398-0).
REFERENCE LIST
1. Operation and Modeling of The MOS Transistor, by Yannis Tsividis.
2. Physics of Semiconductor Devices, by Simon M. Sze and Kwok K. Ng. (Wiley, 3rd Ed.)
COURSE OUTLINE
1. Silicon Technology (two weeks)
2. Metal-Oxide-Silicon System (two weeks)
3. MOS Field Effect Transistor I: physics and model (two weeks)
4. MOS Field Effect Transistor II: high-field effects and scaling issue (two weeks)
5. Silicon on Insulator (SOI) MOSFETs (one week)
6. Advanced transistors (HEMT and HBJT) (three weeks)
GRADING
Homework/project - 40%
Midterm Exam - 30%
Final Exam - 30%
The dates of the Midterm exam will be announced in class at least two weeks before the exam, and will depend on the course progress.
Chapter I Overview of Silicon Technology
MOSFET fabrication processes ppt file or pdf file
Homework #1: Draw a simple MOSFET fabrication process flow and describe each step with a sentence. Due Monday, Feb. 4, 2008
Homework #2 pdf file Due Monday, Feb. 11, 2008
Chapter II Properties of The Metal-Oxide-Semiconductor System